Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ

Koustav Ganguly, Palak Ambwani, Peng Xu, Jong Seok Jeong, K. Andre Mkhoyan, C. Leighton, Bharat Jalan

Research output: Contribution to journalArticle

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Abstract

BaSnO3-δ has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3-δ on SrTiO3(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO3-δ, leading to electron densities above 10<sup>19</sup> cm<sup>-3</sup>, 5 mΩ cm resistivities, and room temperature mobility of 20 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> in 300-Å-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.

Original languageEnglish (US)
Article number062509
JournalAPL Materials
Volume3
Issue number6
DOIs
StatePublished - Jun 1 2015

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Oxygen
Sputter deposition
Thick films
Stoichiometry
Oxides
Carrier concentration
Electronic equipment
Vacuum
Annealing
Semiconductor materials
Temperature
Microstructure
strontium titanium oxide

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Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ. / Ganguly, Koustav; Ambwani, Palak; Xu, Peng; Jeong, Jong Seok; Mkhoyan, K. Andre; Leighton, C.; Jalan, Bharat.

In: APL Materials, Vol. 3, No. 6, 062509, 01.06.2015.

Research output: Contribution to journalArticle

@article{d67b85fbe8d84eeab853a7a92e1546eb,
title = "Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ",
abstract = "BaSnO3-δ has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3-δ on SrTiO3(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO3-δ, leading to electron densities above 1019 cm-3, 5 mΩ cm resistivities, and room temperature mobility of 20 cm2 V-1 s-1 in 300-{\AA}-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.",
author = "Koustav Ganguly and Palak Ambwani and Peng Xu and Jeong, {Jong Seok} and Mkhoyan, {K. Andre} and C. Leighton and Bharat Jalan",
year = "2015",
month = "6",
day = "1",
doi = "10.1063/1.4919969",
language = "English (US)",
volume = "3",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ

AU - Ganguly, Koustav

AU - Ambwani, Palak

AU - Xu, Peng

AU - Jeong, Jong Seok

AU - Mkhoyan, K. Andre

AU - Leighton, C.

AU - Jalan, Bharat

PY - 2015/6/1

Y1 - 2015/6/1

N2 - BaSnO3-δ has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3-δ on SrTiO3(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO3-δ, leading to electron densities above 1019 cm-3, 5 mΩ cm resistivities, and room temperature mobility of 20 cm2 V-1 s-1 in 300-Å-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.

AB - BaSnO3-δ has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3-δ on SrTiO3(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO3-δ, leading to electron densities above 1019 cm-3, 5 mΩ cm resistivities, and room temperature mobility of 20 cm2 V-1 s-1 in 300-Å-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84929095906&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929095906&partnerID=8YFLogxK

U2 - 10.1063/1.4919969

DO - 10.1063/1.4919969

M3 - Article

AN - SCOPUS:84929095906

VL - 3

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 6

M1 - 062509

ER -