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BaSnO3-δ has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO3-δ on SrTiO3(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO3-δ, leading to electron densities above 10<sup>19</sup> cm<sup>-3</sup>, 5 mΩ cm resistivities, and room temperature mobility of 20 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> in 300-Å-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.
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Reporting period for MRSEC
- Period 1