Structure and properties of ternary manganese nitride Mn ₃CuN_y thin films fabricated by facing target magnetron sputtering

Keyphrases

• Manganese Nitride 100%
• Facing Targets Magnetron Sputtering 100%
• Semiconductors 50%
• X Ray Diffraction 50%
• Increased Temperature 50%
• Anti-perovskite 50%
• Substrate Temperature 50%
• Structural Phase Transition 50%
• X-ray Photoelectron Spectroscopy 50%
• Resistivity 50%
• Decreasing Temperature 50%
• Lattice Constant 50%
• Diffraction Ray 50%
• Si(111) 50%
• Temperature-dependent Resistivity 50%
• Single Crystal Si 50%
• Positive Thermal Expansion 50%
• Constant-with-temperature 50%
• Ferrimagnetic Transition 50%
• Thermal Expansion Behavior 50%
• K(I) 50%
• Linear Thermal Expansion Coefficient 50%

Material Science

• Magnetron Sputtering 100%
• Nitride Compound 100%
• Manganese 100%
• Thin Films 100%
• Thermal Expansion 50%
• Electrical Resistivity 50%
• X-Ray Diffraction 25%
• Lattice Constant 25%
• X-Ray Photoelectron Spectroscopy 25%
• Single Crystal 25%
• Crystal Structure 25%

Chemical Engineering

• Magnetron Sputtering 100%
• Film 100%
• Nitride 100%