Structure and properties of ternary manganese nitride Mn 3CuNy thin films fabricated by facing target magnetron sputtering

Yuanyuan Na, Cong Wang, Ying Sun, Lihua Chu, Man Nie, Nian Ji, Jian Ping Wang

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11 Scopus citations


Deposition of Mn3CuNy thin films on single crystal Si (1 0 0) at various substrate temperatures (Tsub) by facing target magnetron sputtering is reported. The crystal structure and composition were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results confirmed that the crystalline antiperovskite Mn 3CuNy thin film with (2 0 0) highly preferred texture had been obtained at Tsub = 180 °C. Furthermore, for the resulting Mn3CuNy thin film, it showed different properties compared with the bulk counterpart. There was a paramagnetic to ferrimagnetic transition at 225 K with decreasing temperature. The change of the lattice constant with temperature presented positive thermal expansion behavior and no structural transition was observed. The average linear thermal expansion coefficient (α) is 2.49 × 10-5 K-1 from 123 K to 298 K. More interestingly, the temperature dependence of resistivity displayed a semiconductor-like behavior, i.e. an obvious monotonous decrease of resistivity with increasing temperature.

Original languageEnglish (US)
Pages (from-to)1022-1027
Number of pages6
JournalMaterials Research Bulletin
Issue number7
StatePublished - Jul 2011

Bibliographical note

Funding Information:
This work was supported by National Natural Science Foundation of China (NSFC) (Nos. 50772008 and 90922037 ) and National Science Foundation NNIN program .


  • A. Thin films
  • B. Sputtering
  • D. Electrical properties
  • D. Magnetic properties
  • D. Thermal expansion


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