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Structure and composition of GaN(0001) A and B surfaces
R. Held
, G. Nowak
, B. E. Ishaug
, S. M. Seutter
, A. Parkhomovsky
, A. M. Dabiran
, Philip I Cohen
, I. Grzegory
, S. Porowski
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
73
Scopus citations
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Keyphrases
Reflection High-energy Electron Diffraction
100%
GaN (0001)
100%
Sapphire
50%
GaN Films
50%
Surface Termination
50%
Nitrides
50%
Mass Spectroscopy
25%
Spectroscopic Measurement
25%
Atomic Force Microscopy
25%
Molecular Beam Epitaxy
25%
Electron Diffraction Pattern
25%
Desorption
25%
Substrate Surface
25%
Scanning Tunneling Microscopy
25%
Diffraction Intensity
25%
Diffraction Measurements
25%
Knudsen Cell
25%
Annealing Process
25%
Plane Surface
25%
Step Edge
25%
Surface Reconstruction
25%
Bulk GaN
25%
Mechanical Polishing
25%
GaN Crystal
25%
Nucleation Layer
25%
Epitaxial GaN
25%
Intensity Reconstruction
25%
C-plane
25%
Engineering
High energy electron diffraction
100%
Surface Termination
50%
Atomic Force Microscopy
25%
Substrate Surface
25%
Preliminary Investigation
25%
Plane Surface
25%
Annealing Process
25%
Scanning Tunneling Microscopy
25%
Mechanical Polishing
25%
Mass Spectrum
25%
Mass Spectrometry
25%
Material Science
Surface (Surface Science)
100%
Film
25%
Reflection High-Energy Electron Diffraction
25%
Sapphire
12%
Desorption
6%
Molecular Beam Epitaxy
6%
Diffraction Pattern
6%
Atomic Force Microscopy
6%
Nucleation
6%
Diffraction Measurement
6%
Scanning Tunneling Microscopy
6%
Surface Reconstruction
6%