Structural, electronic, vibrational and dielectric properties of selected high-shape K semiconductor oxides

L. M.R. Scolfaro, H. W.Leite Alves, P. D. Borges, Joelson Cott Garcia, E. F. Da Silva

Research output: Contribution to journalReview articlepeer-review

7 Scopus citations

Abstract

The semiconductor oxides SnO2, HfO2, ZrO2, TiO2and SrTiO3are interesting materials for applications as high-K dielectric gate materials in silicon-based devices and spintronics, among others. Here we review our theoretical work about the structural, electronic and vibrational properties of these oxides in their most stable structural phases, including dielectric properties as derived from the electronic structure taking into account the lattice contribution. Finally, we address the recent role played by the presence of transition metal atoms in semiconductor oxides, considering in particular SnO2as an example in forming diluted magnetic alloys.

Original languageEnglish (US)
Article number413001
JournalJournal of Physics D: Applied Physics
Volume47
Issue number41
DOIs
StatePublished - Oct 15 2014

Keywords

  • ab initio calculations
  • dielectric properties
  • electronic properties
  • high-K
  • semiconductor oxides
  • structural properties
  • vibrational properties

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