Structural and electrical properties of Cu₂O thin films deposited on ZnO by metal organic chemical vapor deposition

Keyphrases

• Structural Properties 100%
• Electrical Properties 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Cu2O Films 100%
• Cu2O Thin Film 100%
• Grain Size 66%
• Film Thickness 66%
• Deposition Temperature 66%
• Epitaxial 33%
• Grain Boundary 33%
• X Ray Diffraction 33%
• Copper(II) Oxide 33%
• Water Vapor 33%
• Substrate Temperature 33%
• Carrier Transport 33%
• Hole Mobility 33%
• Glass Substrate 33%
• Coated Glass 33%
• Carrier Mobility 33%
• Copper(II) 33%
• Oxygen Gas 33%
• P-type Cu2O 33%
• Hexafluoroacetylacetonate 33%

Material Science

• ZnO 100%
• Metal-Organic Chemical Vapor Deposition 100%
• Thin Films 100%
• Film 75%
• Grain Size 50%
• Film Thickness 50%
• X-Ray Diffraction 25%
• Carrier Mobility 25%
• Carrier Transport 25%
• Water Vapor 25%
• Grain Boundary 25%
• Hole Mobility 25%