Abstract
Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1338-1343 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 28 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 2010 |
Bibliographical note
Funding Information:This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0819885. Parts of this work were carried out in the University of Minnesota Characterization Facility, which has received capital equipment funding from the NSF through the MRSEC, ERC, and MRI programs and in the Nanofabrication Center, which receives partial support from NSF through the NNIN program. S.J. was supported by a Samsung Fellowship.