Structural and dielectric properties of Ba0.5Sr0.5TiO3thin films with an EPI-RuO2 bottom electrode

Q. X. Jia; A. T. Findikoglu; R. Zhou; S. R. Foltyn; X. D. Wu; J. L. Smith; Q. Wang; D. F. Evans; W. L. Gladfelter

doi:10.1080/10584589808012698

Structural and dielectric properties of Ba_0.5Sr_0.5TiO₃thin films with an EPI-RuO₂ bottom electrode

Q. X. Jia, A. T. Findikoglu, R. Zhou, S. R. Foltyn, X. D. Wu, J. L. Smith, Q. Wang, D. F. Evans, W. L. Gladfelter

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Epitaxial conductive RuO₂ thin films were used as bottom electrodes of Ba_0.5Sr_0.5TiO₃ (BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO₂ on LaAlO₃. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6×10⁵ V/cm.

Original language	English (US)
Pages (from-to)	111-119
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	19
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589808012698
State	Published - 1998

Bibliographical note

Funding Information:
The work at Los Alamos was supported under Los Alamos National Laboratory Directed Research and Development Projects.

Keywords

BSTO
DRAMs
Thin film

Publisher link

10.1080/10584589808012698

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@article{6897b8f7f7e84368b417f904e7c7ab16,

title = "Structural and dielectric properties of Ba0.5Sr0.5TiO3thin films with an EPI-RuO2 bottom electrode",

abstract = "Epitaxial conductive RuO2 thin films were used as bottom electrodes of Ba0.5Sr0.5TiO3 (BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO2 on LaAlO3. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6×105 V/cm.",

keywords = "BSTO, DRAMs, Thin film",

author = "Jia, {Q. X.} and Findikoglu, {A. T.} and R. Zhou and Foltyn, {S. R.} and Wu, {X. D.} and Smith, {J. L.} and Q. Wang and Evans, {D. F.} and Gladfelter, {W. L.}",

note = "Funding Information: The work at Los Alamos was supported under Los Alamos National Laboratory Directed Research and Development Projects.",

year = "1998",

doi = "10.1080/10584589808012698",

language = "English (US)",

volume = "19",

pages = "111--119",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Structural and dielectric properties of Ba0.5Sr0.5TiO3thin films with an EPI-RuO2 bottom electrode

AU - Jia, Q. X.

AU - Findikoglu, A. T.

AU - Zhou, R.

AU - Foltyn, S. R.

AU - Wu, X. D.

AU - Smith, J. L.

AU - Wang, Q.

AU - Evans, D. F.

AU - Gladfelter, W. L.

N1 - Funding Information: The work at Los Alamos was supported under Los Alamos National Laboratory Directed Research and Development Projects.

PY - 1998

Y1 - 1998

N2 - Epitaxial conductive RuO2 thin films were used as bottom electrodes of Ba0.5Sr0.5TiO3 (BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO2 on LaAlO3. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6×105 V/cm.

AB - Epitaxial conductive RuO2 thin films were used as bottom electrodes of Ba0.5Sr0.5TiO3 (BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO2 on LaAlO3. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6×105 V/cm.

KW - BSTO

KW - DRAMs

KW - Thin film

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U2 - 10.1080/10584589808012698

DO - 10.1080/10584589808012698

M3 - Article

AN - SCOPUS:0032298479

SN - 1058-4587

VL - 19

SP - 111

EP - 119

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -