Structural and dielectric properties of Ba0.5Sr0.5TiO3thin films with an EPI-RuO2 bottom electrode

Q. X. Jia, A. T. Findikoglu, R. Zhou, S. R. Foltyn, X. D. Wu, J. L. Smith, Q. Wang, D. F. Evans, W. L. Gladfelter

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Abstract

Epitaxial conductive RuO2 thin films were used as bottom electrodes of Ba0.5Sr0.5TiO3 (BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO2 on LaAlO3. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6×105 V/cm.

Original languageEnglish (US)
Pages (from-to)111-119
Number of pages9
JournalIntegrated Ferroelectrics
Volume19
Issue number1-4
DOIs
StatePublished - 1998

Bibliographical note

Funding Information:
The work at Los Alamos was supported under Los Alamos National Laboratory Directed Research and Development Projects.

Keywords

  • BSTO
  • DRAMs
  • Thin film

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