Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

  • M. K. Hudait
  • , Y. Zhu
  • , D. Maurya
  • , S. Priya
  • , P. K. Patra
  • , A. W.K. Ma
  • , A. Aphale
  • , I. Macwan

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Fingerprint

Dive into the research topics of 'Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy'. Together they form a unique fingerprint.

Keyphrases

Material Science