Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructures

T. K. Higman, M. A. Emanuel, J. J. Coleman, S. J. Jeng, C. M. Wayman

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Abstract

Both secondary ion mass spectrometry and transmission electron microscopy have been used to characterize Au-Ni-Ge and Au-Ag-Ge ohmic contacts to modulation-doped GaAs/AlGaAs heterostructures. The time periods for alloying the contact were kept to a minimum (<25 s) in order to obtain controlled diffusion of Ge into the semiconductor. Structural analysis shows that a stable alloy contact is formed after 3 s of alloying at temperatures above the Au-Ge melting point. There were no major structural or compositional changes observed with longer alloying times. The Ge-rich region has a tendency to regrow epitaxially on the GaAs after alloying, as shown by high-resolution electron microscopy.

Original languageEnglish (US)
Pages (from-to)677-680
Number of pages4
JournalJournal of Applied Physics
Volume60
Issue number2
DOIs
StatePublished - 1986

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