Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene

Simranjeet Singh, Jyoti Katoch, Tiancong Zhu, Ryan J. Wu, Adam S. Ahmed, Walid Amamou, Dongying Wang, K. Andre Mkhoyan, Roland K. Kawakami

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in graphene spin valves by circumventing the impedance mismatch problem, decreasing interfacial spin dephasing mechanisms and decreasing spin absorption back into the ferromagnet. It is thus crucial to integrate superior tunnel barriers to enhance spin transport and spin accumulation in graphene. Here, we employ a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize high quality spin transport as evidenced by room-temperature spin relaxation times exceeding a nanosecond in graphene on silicon dioxide substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier grown by molecular beam epitaxy (MBE), which can withstand large charge injection current densities, allows us to experimentally realize large spin accumulation in graphene at room temperature. This work puts graphene on the path to achieve efficient manipulation of nanomagnet magnetization using spin currents in graphene for logic and memory applications.

Original languageEnglish (US)
Pages (from-to)7578-7585
Number of pages8
JournalNano letters
Volume17
Issue number12
DOIs
StatePublished - Dec 13 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

  • Graphene spintronics
  • lateral spin valves
  • molecular beam epitaxy
  • spin current and spin accumulation
  • transmission electron microscopy
  • tunnel barrier

MRSEC Support

  • Shared

PubMed: MeSH publication types

  • Journal Article
  • Research Support, Non-U.S. Gov't

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