Electrical control of current-induced spin–orbit effects in magnets is supposed to reduce the power consumption in high-density memories to the utmost extent, but the efficient control in metallic magnets at a practical temperature remains elusive. Here, the electrical manipulation of spin–orbit torque is investigated in perpendicularly magnetized Pt/Co/HfOx heterostructures in a nonvolatile manner using an ionic liquid gate. The switching current of magnetization can be reversibly tuned by a factor of two within a small gate voltage range of 1.5 V. The modulation of effective spin Hall angle and the corresponding damping-like torque mainly accounts for the strong electrical manipulation of switching current. Besides the fundamental significance, the findings here may advance the process toward the compatible memory and logic devices driven by dual electrical means, the electric field, and current.
|Original language||English (US)|
|Journal||Advanced Electronic Materials|
|State||Published - Oct 1 2016|
Bibliographical noteFunding Information:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 51322101 and 51571128) and National High Technology Research and Development Program of China (Grant No. 2014AA032904).
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- electrical control effect
- spin Hall angle
- spin–orbit torque