Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

J. Kakalios, R. A. Street, W. B. Jackson

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Abstract

In this paper we find that the stretched-exponential relaxation commonly observed in disordered systems is explained by time-dependent atomic diffusion. The relaxation is observed in the electronic properties of hydrogenated amorphous silicon (a-Si:H), a hydrogen glass material, and reflects the equlibration of localized electronic states. The relaxation is attributed to the motion of bonded hydrogen which exhibits dispersive diffusion with a characteristic power-law time dependence. A quantitative relation between the relaxation and the diffusion is established.

Original languageEnglish (US)
Pages (from-to)1037-1040
Number of pages4
JournalPhysical Review Letters
Volume59
Issue number9
DOIs
StatePublished - Jan 1 1987

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