Abstract
Silicon-based ultra-Thin chips (UTCs) are used to build flexible system-in-foils (SiFs) for bio-sensing and bio-monitoring, and utilize CMOS devices that deliver much higher performance than alternatives such as organic or thin-film transistors. Flexible SiFs experience significant mechanical stress in the field due to the deformation caused during daily use. These impact circuit performance, potentially causing a loss in functionality. This paper first models the stress due to two types of packages schemes for UTCs. Next, the stress is translated to shifts in mobility and threshold voltage of CMOS devices. Finally, the system-level performance variations of two common SiF elements, an A/D converter and an SRAM, are evaluated.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the 21st International Symposium on Quality Electronic Design, ISQED 2020 |
| Publisher | IEEE Computer Society |
| Pages | 237-242 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781728142074 |
| DOIs | |
| State | Published - Mar 2020 |
| Event | 21st International Symposium on Quality Electronic Design, ISQED 2020 - Santa Clara, United States Duration: Mar 25 2020 → Mar 26 2020 |
Publication series
| Name | Proceedings - International Symposium on Quality Electronic Design, ISQED |
|---|---|
| Volume | 2020-March |
| ISSN (Print) | 1948-3287 |
| ISSN (Electronic) | 1948-3295 |
Conference
| Conference | 21st International Symposium on Quality Electronic Design, ISQED 2020 |
|---|---|
| Country/Territory | United States |
| City | Santa Clara |
| Period | 3/25/20 → 3/26/20 |
Bibliographical note
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