Stress effects in p-type AIGaN/GaN heterostructures

Keyphrases

• Stress Effect 100%
• Polarization Charge 100%
• AIGaN 100%
• AlGaN/GaN Heterostructure 100%
• Stress-induced 50%
• Band Gap 50%
• Interfacial Polarization 50%
• Valence Band 50%
• Wurtzite Structure 50%
• Linear Elastic 50%
• Sapphire Substrate 50%
• P-channel 50%
• Piezoresistive 50%
• Valence Band Structure 50%
• Sheka 50%
• Surface Defect States 50%
• Band Energy 50%
• III-nitride Heterostructures 50%
• III-nitride Materials 50%
• Elastic Theory 50%
• Rashba 50%
• Six-band 50%
• Deformation Potential 50%
• Bulk Defects 50%
• Piezooptic Effect 50%
• Uniaxial 50%
• Expected Effect 50%
• Interface Defect States 50%
• Channel Region 50%
• Lattice Polarizations 50%

Physics

• Nitride 100%
• Physics 50%
• Optics 50%
• Piezoelectricity 50%
• Energy Band 50%
• Wurtzite 50%

Material Science

• Heterojunction 100%
• Piezoelectricity 33%
• Sapphire 33%
• Nitride Compound 33%
• Materials Class 33%
• III Nitride Materials 33%