Stress-aware performance evaluation of 3D-stacked wide I/O DRAMs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

3D-stacked wide I/O DRAM can significantly increase cell density and bandwidth while also lowering power consumption. However, 3D structures experience significant thermomechanical stress, which impacts circuit performance. This paper develops a procedure that performs a full performance analysis of 3D DRAMs, including latency, leakage power, refresh power, and area, while incorporating the effects of both layout-aware stress and layout-independent stress. The approach first proposes an analytic stress analysis method for the entire 3D DRAM structure, capturing the stress induced by TSVs, micro bumps, package bumps and warpage. Next, this stress is translated to variations in device mobility and threshold voltage, after which analytical models for latency, leakage power, and refresh power are derived. Finally, a complete analysis of performance variations is performed for various 3D DRAM layout configurations to assess the impact of layout-dependent stress.

Original languageEnglish (US)
Title of host publication2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages645-650
Number of pages6
ISBN (Electronic)9781538630938
DOIs
StatePublished - Dec 13 2017
Externally publishedYes
Event36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017 - Irvine, United States
Duration: Nov 13 2017Nov 16 2017

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
Volume2017-November
ISSN (Print)1092-3152

Other

Other36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017
CountryUnited States
CityIrvine
Period11/13/1711/16/17

Bibliographical note

Funding Information:
0This work was supported in part by the NSF under award CCF-1421606.

Funding Information:
This work was supported in part by the NSF under award CCF-1421606.

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