3D-stacked wide I/O DRAM can significantly increase cell density and bandwidth while also lowering power consumption. However, 3D structures experience significant thermomechanical stress, which impacts circuit performance. This paper develops a procedure that performs a full performance analysis of 3D DRAMs, including latency, leakage power, refresh power, and area, while incorporating the effects of both layout-aware stress and layout-independent stress. The approach first proposes an analytic stress analysis method for the entire 3D DRAM structure, capturing the stress induced by TSVs, micro bumps, package bumps and warpage. Next, this stress is translated to variations in device mobility and threshold voltage, after which analytical models for latency, leakage power, and refresh power are derived. Finally, a complete analysis of performance variations is performed for various 3D DRAM layout configurations to assess the impact of layout-dependent stress.
|Original language||English (US)|
|Title of host publication||2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||6|
|State||Published - Dec 13 2017|
|Event||36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017 - Irvine, United States|
Duration: Nov 13 2017 → Nov 16 2017
|Name||IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD|
|Other||36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017|
|Period||11/13/17 → 11/16/17|
Bibliographical noteFunding Information:
0This work was supported in part by the NSF under award CCF-1421606.
This work was supported in part by the NSF under award CCF-1421606.