Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

K. Rim; R. Anderson; D. Boyd; F. Cardone; K. Chan; H. Chen; S. Christansen; J. Chu; K. Jenkins; T. Kanarsky; S. Koester; B. H. Lee; K. Lee; V. Mazzeo; A. Mocuta; D. Mocuta; P. M. Mooney; P. Oldiges; J. Ott; P. Ronsheim; R. Roy; A. Steegen; M. Yang; H. Zhu; M. Ieong; H. S.P. Wong

doi:10.1016/S0038-1101(03)00041-8

Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. RonsheimR. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong, H. S.P. Wong

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted.

Original language	English (US)
Pages (from-to)	1133-1139
Number of pages	7
Journal	Solid-State Electronics
Volume	47
Issue number	7 SPEC.
DOIs	https://doi.org/10.1016/S0038-1101(03)00041-8
State	Published - Jul 2003

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Rim, K., Anderson, R., Boyd, D., Cardone, F., Chan, K., Chen, H., Christansen, S., Chu, J., Jenkins, K., Kanarsky, T., Koester, S., Lee, B. H., Lee, K., Mazzeo, V., Mocuta, A., Mocuta, D., Mooney, P. M., Oldiges, P., Ott, J., ... Wong, H. S. P. (2003). Strained Si CMOS (SS CMOS) technology: Opportunities and challenges. Solid-State Electronics, 47(7 SPEC.), 1133-1139. https://doi.org/10.1016/S0038-1101(03)00041-8

Rim, K, Anderson, R, Boyd, D, Cardone, F, Chan, K, Chen, H, Christansen, S, Chu, J, Jenkins, K, Kanarsky, T, Koester, S, Lee, BH, Lee, K, Mazzeo, V, Mocuta, A, Mocuta, D, Mooney, PM, Oldiges, P, Ott, J, Ronsheim, P, Roy, R, Steegen, A, Yang, M, Zhu, H, Ieong, M & Wong, HSP 2003, 'Strained Si CMOS (SS CMOS) technology: Opportunities and challenges', Solid-State Electronics, vol. 47, no. 7 SPEC., pp. 1133-1139. https://doi.org/10.1016/S0038-1101(03)00041-8

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abstract = "Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted.",

author = "K. Rim and R. Anderson and D. Boyd and F. Cardone and K. Chan and H. Chen and S. Christansen and J. Chu and K. Jenkins and T. Kanarsky and S. Koester and Lee, {B. H.} and K. Lee and V. Mazzeo and A. Mocuta and D. Mocuta and Mooney, {P. M.} and P. Oldiges and J. Ott and P. Ronsheim and R. Roy and A. Steegen and M. Yang and H. Zhu and M. Ieong and Wong, {H. S.P.}",

year = "2003",

month = jul,

doi = "10.1016/S0038-1101(03)00041-8",

language = "English (US)",

volume = "47",

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T2 - Opportunities and challenges

AU - Rim, K.

AU - Anderson, R.

AU - Boyd, D.

AU - Cardone, F.

AU - Chan, K.

AU - Chen, H.

AU - Christansen, S.

AU - Chu, J.

AU - Jenkins, K.

AU - Kanarsky, T.

AU - Koester, S.

AU - Lee, B. H.

AU - Lee, K.

AU - Mazzeo, V.

AU - Mocuta, A.

AU - Mocuta, D.

AU - Mooney, P. M.

AU - Oldiges, P.

AU - Ott, J.

AU - Ronsheim, P.

AU - Roy, R.

AU - Steegen, A.

AU - Yang, M.

AU - Zhu, H.

AU - Ieong, M.

AU - Wong, H. S.P.

PY - 2003/7

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AB - Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted.

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Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

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