Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. RonsheimR. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong, H. S.P. Wong

Research output: Contribution to journalArticlepeer-review

81 Scopus citations

Abstract

Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted.

Original languageEnglish (US)
Pages (from-to)1133-1139
Number of pages7
JournalSolid-State Electronics
Volume47
Issue number7 SPEC.
DOIs
StatePublished - Jul 2003

Bibliographical note

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Copyright 2018 Elsevier B.V., All rights reserved.

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