Strained layer InGaAs channel negative-resistance field-effect transistor

M. E. Favaro; G. E. Fernández; T. K. Higman; P. K. York; L. M. Miller; J. J. Coleman

doi:10.1063/1.342552

Strained layer InGaAs channel negative-resistance field-effect transistor

M. E. Favaro
, G. E. Fernández
, T. K. Higman
, P. K. York
, L. M. Miller
, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In_0.18Ga_0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

Original language	English (US)
Pages (from-to)	378-380
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	1
DOIs	https://doi.org/10.1063/1.342552
State	Published - 1989

Publisher link

10.1063/1.342552

Find It

Find It at U of M Libraries

Cite this

@article{097d4e1b4ad34c1499253f39b1be7293,

title = "Strained layer InGaAs channel negative-resistance field-effect transistor",

abstract = "We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.",

author = "Favaro, \{M. E.\} and Fern{\'a}ndez, \{G. E.\} and Higman, \{T. K.\} and York, \{P. K.\} and Miller, \{L. M.\} and Coleman, \{J. J.\}",

year = "1989",

doi = "10.1063/1.342552",

language = "English (US)",

volume = "65",

pages = "378--380",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Strained layer InGaAs channel negative-resistance field-effect transistor

AU - Favaro, M. E.

AU - Fernández, G. E.

AU - Higman, T. K.

AU - York, P. K.

AU - Miller, L. M.

AU - Coleman, J. J.

PY - 1989

Y1 - 1989

N2 - We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

AB - We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

UR - https://www.scopus.com/pages/publications/0041456993

UR - https://www.scopus.com/pages/publications/0041456993#tab=citedBy

U2 - 10.1063/1.342552

DO - 10.1063/1.342552

M3 - Article

AN - SCOPUS:0041456993

SN - 0021-8979

VL - 65

SP - 378

EP - 380

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Strained layer InGaAs channel negative-resistance field-effect transistor

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this