Strained layer InGaAs channel negative-resistance field-effect transistor

M. E. Favaro, G. E. Fernández, T. K. Higman, P. K. York, L. M. Miller, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

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Abstract

We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.

Original languageEnglish (US)
Pages (from-to)378-380
Number of pages3
JournalJournal of Applied Physics
Volume65
Issue number1
DOIs
StatePublished - Dec 1 1989

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