Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

R. Maiti; C. Patil; T. Xie; J. G. Azadani; R. Amin; M. Miscuglio; D. Van Thourhout; T. Low; S. Bank; V. J. Sorger

doi:10.1364/CLEO_SI.2020.SM3R.6

Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm

R. Maiti
, C. Patil
, T. Xie
, J. G. Azadani
, R. Amin
, M. Miscuglio
, D. Van Thourhout
, T. Low
, S. Bank
, V. J. Sorger

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we show how strain-engineering (∼4% tensile strain) lowers the bandgap (-0.2eV) of MoTe₂ nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz².

Original language	English (US)
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.SM3R.6
State	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May
ISSN (Print)	1092-8081

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	5/10/20 → 5/15/20

Bibliographical note

Publisher Copyright:
© 2020 OSA.

Publisher link

10.1364/CLEO_SI.2020.SM3R.6

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Cite this

Maiti, R., Patil, C., Xie, T., Azadani, J. G., Amin, R., Miscuglio, M., Van Thourhout, D., Low, T., Bank, S., & Sorger, V. J. (2020). Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020 Article 9193666 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. / Maiti, R.; Patil, C.; Xie, T. et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9193666 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Maiti, R, Patil, C, Xie, T, Azadani, JG, Amin, R, Miscuglio, M, Van Thourhout, D, Low, T, Bank, S & Sorger, VJ 2020, Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020., 9193666, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 5/10/20. https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

Maiti R, Patil C, Xie T, Azadani JG, Amin R, Miscuglio M et al. Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9193666. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1364/CLEO_SI.2020.SM3R.6

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abstract = "Here we show how strain-engineering (∼4\% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz2.",

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