Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

R. Maiti; C. Patil; T. Xie; J. G. Azadani; R. Amin; M. Miscuglio; D. Van Thourhout; T. Low; S. Bank; V. J. Sorger

doi:10.1364/CLEO_SI.2020.SM3R.6

Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm

R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. Van Thourhout, T. Low, S. Bank, V. J. Sorger

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we show how strain-engineering (∼4% tensile strain) lowers the bandgap (-0.2eV) of MoTe₂ nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz².

Original language	English (US)
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.SM3R.6
State	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May
ISSN (Print)	1092-8081

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	5/10/20 → 5/15/20

Bibliographical note

Publisher Copyright:
© 2020 OSA.

Publisher link

10.1364/CLEO_SI.2020.SM3R.6

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Cite this

Maiti, R., Patil, C., Xie, T., Azadani, J. G., Amin, R., Miscuglio, M., Van Thourhout, D., Low, T., Bank, S., & Sorger, V. J. (2020). Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020 Article 9193666 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. / Maiti, R.; Patil, C.; Xie, T. et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9193666 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Maiti, R, Patil, C, Xie, T, Azadani, JG, Amin, R, Miscuglio, M, Van Thourhout, D, Low, T, Bank, S & Sorger, VJ 2020, Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020., 9193666, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 5/10/20. https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

Maiti R, Patil C, Xie T, Azadani JG, Amin R, Miscuglio M et al. Strain-Engineered MoTe₂ Photodetector in Silicon Photonics at 1550 nm. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings: Science and Innovations, CLEO_SI 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9193666. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1364/CLEO_SI.2020.SM3R.6

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