Strain effects on the work function of an organic semiconductor

Yanfei Wu, Annabel R. Chew, Geoffrey A. Rojas, Gjergji Sini, Greg Haugstad, Alex Belianinov, Sergei V. Kalinin, Hong Li, Chad Risko, Jean Luc Bredas, Alberto Salleo, C. Daniel Frisbie

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

Original languageEnglish (US)
Article number10270
JournalNature communications
Volume7
DOIs
StatePublished - Feb 1 2016

How much support was provided by MRSEC?

  • Shared

Reporting period for MRSEC

  • Period 2

PubMed: MeSH publication types

  • Journal Article
  • Research Support, U.S. Gov't, Non-P.H.S.

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    Wu, Y., Chew, A. R., Rojas, G. A., Sini, G., Haugstad, G., Belianinov, A., Kalinin, S. V., Li, H., Risko, C., Bredas, J. L., Salleo, A., & Frisbie, C. D. (2016). Strain effects on the work function of an organic semiconductor. Nature communications, 7, [10270]. https://doi.org/10.1038/ncomms10270