Strain effect of multilayer FeN structure on GaAs substrate

Xiaowei Zhang, Nian Ji, Valeria Lauter, Hailemariam Ambaye, Jian Ping Wang

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Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe 65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

Original languageEnglish (US)
Article number17E149
JournalJournal of Applied Physics
Issue number17
StatePublished - May 7 2013

Bibliographical note

Funding Information:
This work was partially supported by Seagate Technology and Western Digital. Parts of this work were carried out in the Characterization Facility through NSF MRSEC program at University of Minnesota.


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