Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Keyphrases

• GaAsP 100%
• Gallium Arsenide 100%
• GaAsSb 100%
• Strain-compensated 100%
• Arsenic 50%
• Quantum Well 50%
• Room Temperature 50%
• Blue Shift 50%
• Molecular Beam Epitaxy 50%
• Photoluminescence 50%
• Semiconductor Lasers 50%
• Gallium 50%
• Repetition Rate 50%
• Diode Laser 50%
• Active Layer 50%
• Large Band Gap 50%
• Electron Confinement 50%
• Phosphide 50%
• Gallium Arsenide Substrates 50%
• Laser Micromachining 50%
• Ns Pulse 50%
• Compensated Semiconductors 50%
• Threshold Current Density 50%
• Semiconducting Gallium Arsenide 50%
• Waveguide Layer 50%
• Graded-index Waveguide 50%

Physics

• Semiconductor Laser 100%
• Molecular Beam Epitaxy 100%
• Quantum Wells 50%
• Waveguide 50%
• Gallium Arsenide 50%
• Room Temperature 50%
• Blue Shift 50%
• Energy Gaps (Solid State) 50%
• Photoluminescence 50%