Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Z. B. Chen; S. R. Johnson; C. Navarro; S. Chaparro; J. Xu; N. Samal; J. Wang; Y. Cao; S. Yu; Y. H. Zhang

Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Z. B. Chen, S. R. Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang, Y. Cao, S. Yu, Y. H. Zhang

Research output: Contribution to conference › Paper › peer-review

Abstract

Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm² for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

Original language	English (US)
Pages	209
Number of pages	1
State	Published - 2001
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001

Other

Other	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	5/6/01 → 5/11/01

Find It

Find It at U of M Libraries

Cite this

@conference{32220e2cd44a4706a51c111772f7b037,

title = "Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE",

abstract = "Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.",

author = "Chen, {Z. B.} and Johnson, {S. R.} and C. Navarro and S. Chaparro and J. Xu and N. Samal and J. Wang and Y. Cao and S. Yu and Zhang, {Y. H.}",

year = "2001",

language = "English (US)",

pages = "209",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

AU - Chen, Z. B.

AU - Johnson, S. R.

AU - Navarro, C.

AU - Chaparro, S.

AU - Xu, J.

AU - Samal, N.

AU - Wang, J.

AU - Cao, Y.

AU - Yu, S.

AU - Zhang, Y. H.

PY - 2001

Y1 - 2001

N2 - Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

AB - Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

UR - http://www.scopus.com/inward/record.url?scp=0034801113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034801113&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034801113

SP - 209

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Abstract

Other

Find It

Other files and links

Fingerprint

Cite this