TY - JOUR
T1 - Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction
AU - Lebeau, James M.
AU - Engel-Herbert, Roman
AU - Jalan, Bharat
AU - Cagnon, Joël
AU - Moetakef, Pouya
AU - Stemmer, Susanne
AU - Stephenson, G. Brian
PY - 2009/10/21
Y1 - 2009/10/21
N2 - Homoepitaxial SrTiO3 thin films grown by molecular beam epitaxy are analyzed using high-resolution x-ray diffraction and transmission electron microscopy. Measured 00L x-ray scans from stoichiometric and nonstoichiometric films are compared with calculations that account for the effects of film thickness, lattice parameter, fractional site occupancy, and an offset between film and substrate at the interface. It is found that thickness fringes, commonly observed around Bragg reflections even in stoichiometric homoepitaxial SrTiO3 films, arise from a film/substrate interface offset. Transmission electron microscopy studies confirm the presence of strain at those homoepitaxial interfaces that show an offset in x-ray diffraction. The consequences for stoichiometry optimization of homoepitaxial films using high-resolution x-ray diffraction and the quality of regrown oxide interfaces are discussed.
AB - Homoepitaxial SrTiO3 thin films grown by molecular beam epitaxy are analyzed using high-resolution x-ray diffraction and transmission electron microscopy. Measured 00L x-ray scans from stoichiometric and nonstoichiometric films are compared with calculations that account for the effects of film thickness, lattice parameter, fractional site occupancy, and an offset between film and substrate at the interface. It is found that thickness fringes, commonly observed around Bragg reflections even in stoichiometric homoepitaxial SrTiO3 films, arise from a film/substrate interface offset. Transmission electron microscopy studies confirm the presence of strain at those homoepitaxial interfaces that show an offset in x-ray diffraction. The consequences for stoichiometry optimization of homoepitaxial films using high-resolution x-ray diffraction and the quality of regrown oxide interfaces are discussed.
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U2 - 10.1063/1.3243696
DO - 10.1063/1.3243696
M3 - Article
AN - SCOPUS:70350037660
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142905
ER -