STM studies of near-optimal doped Bi2Sr2CaCu 2O8+δ

A. Kapitulnik, A. Fang, C. Howald, M. Greven

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Abstract

In this paper, we summarize our Scanning Tunnelling Microscope (STM) studies of the density of electronic states in nearly optimally doped Bi 2Sr2CaCu2O8+δ in zero field. We report on the inhomogeneity of the gap structure, density of states modulations with four-lattice constant period, and coherence peak modulation.

Original languageEnglish (US)
Pages (from-to)344-349
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume67
Issue number1-3
DOIs
StatePublished - Jan 2006

Bibliographical note

Funding Information:
We thank Steven Kivelson for many helpful discussions. Work supported by the Department of Energy grant DE-FG03-01ER45925.

Keywords

  • C. Scanning tunnelling microscopy (STM)

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