Steep-slope hysteresis-free negative capacitance MoS₂ transistors

Keyphrases

• MOSFET 100%
• Room Temperature 100%
• Negative Capacitance 100%
• Steep Slope 100%
• Thermionic 100%
• MoS2 Transistor 100%
• Hysteresis-free 100%
• Subthreshold Slope 100%
• Electrostatic Control 50%
• Two Dimensional 50%
• Gate Dielectric 50%
• Supply Voltage 50%
• Power Consumption 50%
• Carbon Nanotube Field Effect Transistor (CNTFET) 50%
• Promising Solutions 50%
• Excellent Performance 50%
• Oxide Layer 50%
• Drain Current 50%
• Negative Differential Resistance 50%
• Gate Stack 50%
• Voltage Power 50%
• Overall Power 50%
• Molybdenite 50%
• Low Dielectric Constant 50%
• 2D Semiconductors 50%
• Self-heating Effect 50%
• Dielectric Stack 50%
• Drain Induced Barrier Lowering 50%
• Atomically Thin Transition Metal Dichalcogenides 50%
• Steep-slope Transistors 50%
• Junctionless Transistor 50%
• Boltzmann's Tyranny 50%
• Hafnium Zirconium Oxide 50%
• Negative Capacitor 50%
• On-state Current 50%
• Molybdenum Disulfide MoS2 50%

Material Science

• Transistor 100%
• Capacitance 100%
• Ferroelectric Material 66%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Field Effect Transistors 33%
• Capacitor 33%
• Molybdenum 33%
• Zirconia 33%
• Permittivity 33%
• Hafnium 33%
• Transition Metal Dichalcogenides 33%
• Dielectric Material 33%

Chemistry

• Molybdenum Disulfide 100%
• Metal Oxide 50%
• Ambient Reaction Temperature 50%
• Field Effect 50%
• Dielectric Material 25%
• Zirconia 25%
• Drain Current 25%
• Dielectric Constant 25%
• Hafnium 25%
• Boltzmann Equation 25%
• Permittivity 25%
• Transition Metal Dichalcogenide 25%