Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber

Stephen A Campbell, Karson L. Knutson, John D. Leighton, K. H. Ahn, Benjamin Y.H. Liu

Research output: Contribution to journalArticlepeer-review

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The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high thermal uniformity systems however, convective cooling does play an important role, approximately equal to that of edge losses.

Original languageEnglish (US)
Pages (from-to)14-20
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number1
StatePublished - Feb 1991

Bibliographical note

Funding Information:
The authors wish to gratefully acknowledge the assistance of Professor Suhas Patankar who wrote the SIMPLER code as well as the support of the Minnesota Supercomputer Institute, the Particle Contamination Control Research Consortium (KHA and BL), and the National Science Foundation (SAC, KLK, JDL) (Award No. ECS-8706913).


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