Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber

Stephen A Campbell; Karson L. Knutson; John D. Leighton; K. H. Ahn; Benjamin Y.H. Liu

doi:10.1109/66.75859

Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber

Stephen A Campbell, Karson L. Knutson, John D. Leighton, K. H. Ahn, Benjamin Y.H. Liu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high thermal uniformity systems however, convective cooling does play an important role, approximately equal to that of edge losses.

Original language	English (US)
Pages (from-to)	14-20
Number of pages	7
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/66.75859
State	Published - Feb 1991

Bibliographical note

Funding Information:
The authors wish to gratefully acknowledge the assistance of Professor Suhas Patankar who wrote the SIMPLER code as well as the support of the Minnesota Supercomputer Institute, the Particle Contamination Control Research Consortium (KHA and BL), and the National Science Foundation (SAC, KLK, JDL) (Award No. ECS-8706913).

Publisher link

10.1109/66.75859

Find It

Find It at U of M Libraries

Cite this

@article{66db61a5035d4ac9b8da89d3bb1b706b,

title = "Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber",

abstract = "The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high thermal uniformity systems however, convective cooling does play an important role, approximately equal to that of edge losses.",

author = "Campbell, {Stephen A} and Knutson, {Karson L.} and Leighton, {John D.} and Ahn, {K. H.} and Liu, {Benjamin Y.H.}",

note = "Funding Information: The authors wish to gratefully acknowledge the assistance of Professor Suhas Patankar who wrote the SIMPLER code as well as the support of the Minnesota Supercomputer Institute, the Particle Contamination Control Research Consortium (KHA and BL), and the National Science Foundation (SAC, KLK, JDL) (Award No. ECS-8706913).",

year = "1991",

month = feb,

doi = "10.1109/66.75859",

language = "English (US)",

volume = "4",

pages = "14--20",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber

AU - Campbell, Stephen A

AU - Knutson, Karson L.

AU - Leighton, John D.

AU - Ahn, K. H.

AU - Liu, Benjamin Y.H.

N1 - Funding Information: The authors wish to gratefully acknowledge the assistance of Professor Suhas Patankar who wrote the SIMPLER code as well as the support of the Minnesota Supercomputer Institute, the Particle Contamination Control Research Consortium (KHA and BL), and the National Science Foundation (SAC, KLK, JDL) (Award No. ECS-8706913).

PY - 1991/2

Y1 - 1991/2

N2 - The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high thermal uniformity systems however, convective cooling does play an important role, approximately equal to that of edge losses.

AB - The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high thermal uniformity systems however, convective cooling does play an important role, approximately equal to that of edge losses.

UR - http://www.scopus.com/inward/record.url?scp=0026105812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026105812&partnerID=8YFLogxK

U2 - 10.1109/66.75859

DO - 10.1109/66.75859

M3 - Article

AN - SCOPUS:0026105812

SN - 0894-6507

VL - 4

SP - 14

EP - 20

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 1

ER -

Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber

Abstract

Bibliographical note

Publisher link

Find It

Other files and links

Fingerprint

Cite this