Statistical modeling and simulation of threshold variation under random dopant fluctuations and line-edge roughness

Keyphrases

• Atomistic Simulation 100%
• Threshold Variation 100%
• Line Edge Roughness 100%
• Random Dopant Fluctuation 100%
• Simulation Method 66%
• Gate Length 66%
• Lithography 66%
• SPICE Simulation 66%
• Circuit Design 33%
• Advanced Technology Node 33%
• Etching Process 33%
• Output Current 33%
• Leakage Current 33%
• Threshold Voltage 33%
• Gate Sizing 33%
• Severely Affected 33%
• Dopant 33%
• Length Change 33%
• Physical Principles 33%
• Statistical Design 33%
• Variation Model 33%
• Statistical Variation 33%
• Nanoscale Transistor 33%
• Compact Model 33%
• Gate Geometry 33%
• Strong Inversion Region 33%
• Narrow-width Effect 33%
• Non-rectangular Gate 33%
• Dopant Fluctuations 33%
• Device Model 33%
• Robust Circuit 33%
• Operating Region 33%
• Saturation Current 33%

Engineering

• Dopants 100%
• Edge Roughness 100%
• Atomistic Simulation 75%
• Gate Length 50%
• Simulation Method 50%
• Lithography 50%
• SPICE 50%
• Circuit Design 25%
• Nodes 25%
• Simulation Result 25%
• Strong Inversion 25%
• Operating Region 25%
• Etching Process 25%
• Narrow Width 25%
• Statistical Variation 25%
• Physical Principle 25%
• Nanoscale 25%
• Transistor 25%

Material Science

• Doping (Additives) 100%
• Lithography 50%
• Electronic Circuit 25%
• Transistor 25%
• Statistical Design 25%