Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Jie Gu, John Keane, Sachin Sapatnekar, Chris H. Kim

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.

Original languageEnglish (US)
Pages (from-to)206-209
Number of pages4
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume16
Issue number2
DOIs
StatePublished - Feb 2008

Bibliographical note

Funding Information:
Manuscript received September 4, 2006; revised March 14, 2007. This work was supported in part by Intel and by IBM. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: jiegu@ece. umn.edu). Digital Object Identifier 10.1109/TVLSI.2007.909809

Keywords

  • Circuit modeling
  • Integrated circuit (IC) design
  • Leakage currents

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