Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs

D. V. Singh, S. J. Koester, J. O. Chu, K. A. Jenkins, P. M. Mooney, Q. C. Ouyang, N. Ruiz, J. A. Ott, D. Ralston, M. Wetzel, P. M. Asbeck, K. L. Saenger, V. V. Patel, A. Grill

Research output: Contribution to journalArticlepeer-review

Abstract

The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.

Original languageEnglish (US)
Pages (from-to)570-572
Number of pages3
JournalElectronics Letters
Volume39
Issue number6
DOIs
StatePublished - Mar 20 2003

Fingerprint Dive into the research topics of 'Static frequency divider circuit using 0.15 μm gate length Si<sub>0.2</sub>Ge<sub>0.8</sub>/Si<sub>0.7</sub>Ge<sub>0.3</sub> p-MODFETs'. Together they form a unique fingerprint.

Cite this