SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Jiaxuan Wen; V. R. Saran Kumar Chaganti; Tristan K. Truttmann; Fengdeng Liu; Bharat Jalan; Steven J. Koester

doi:10.1109/led.2020.3040417

SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Jiaxuan Wen, V. R. Saran Kumar Chaganti, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

Original language	English (US)
Article number	9269996
Pages (from-to)	74-77
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	1
DOIs	https://doi.org/10.1109/led.2020.3040417
State	Published - Jan 1 2021

Bibliographical note

Funding Information:
Manuscript received October 21, 2020; revised November 18, 2020; accepted November 22, 2020. Date of publication November 25, 2020; date of current version December 24, 2020. This work was primarily supported by the Air Force Office of Scientific Research under Award FA9550-19-1-0245, in part by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award DMR-2011401, and in part by the NSF through Award DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-2025124. The review of this letter was arranged by Editor A. Bonfiglio. (Corresponding author: Steven J. Koester.) Jiaxuan Wen and Steven J. Koester are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: [email protected]).

Keywords

MESFET
RF
SrSnOâ
perovskite
stannate

MRSEC Support

Partial

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10.1109/led.2020.3040417

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abstract = "A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.",

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N2 - A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

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SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

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SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

Cite this