SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Jiaxuan Wen, V. R. Saran Kumar Chaganti, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

Original languageEnglish (US)
Article number9269996
Pages (from-to)74-77
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 1 2021

Bibliographical note

Funding Information:
Manuscript received October 21, 2020; revised November 18, 2020; accepted November 22, 2020. Date of publication November 25, 2020; date of current version December 24, 2020. This work was primarily supported by the Air Force Office of Scientific Research under Award FA9550-19-1-0245, in part by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award DMR-2011401, and in part by the NSF through Award DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-2025124. The review of this letter was arranged by Editor A. Bonfiglio. (Corresponding author: Steven J. Koester.) Jiaxuan Wen and Steven J. Koester are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail:


  • RF
  • SrSnOâ
  • perovskite
  • stannate

MRSEC Support

  • Partial


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