Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics

Deyuan Lyu; Jenae E. Shoup; Dingbin Huang; Javier García-Barriocanal; Qi Jia; William Echtenkamp; Geoffrey A. Rojas; Guichuan Yu; Brandon R Zink; Xiaojia Wang; Daniel B. Gopman; Jianping Wang

doi:10.1002/adfm.202214201

Sputtered L1₀-FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics

Deyuan Lyu, Jenae E. Shoup, Dingbin Huang, Javier García-Barriocanal, Qi Jia, William Echtenkamp, Geoffrey A. Rojas, Guichuan Yu, Brandon R Zink, Xiaojia Wang, Daniel B. Gopman, Jianping Wang

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Abstract

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L1₀-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L1₀-FePd thin films on Si/SiO₂ wafers is still unmet. In this paper, high-quality L1₀-FePd and its SAF on Si/SiO₂ wafers are prepared by coating the amorphous SiO₂ surface with an MgO(001) seed layer. The prepared L1₀-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L1₀-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L1₀-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

Original language	English (US)
Article number	2214201
Journal	Advanced Functional Materials
Volume	33
Issue number	18
DOIs	https://doi.org/10.1002/adfm.202214201
State	Published - May 2 2023

Bibliographical note

Funding Information:
This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) (Advanced MTJs for computation in and near random access memory) under Grant HR001117S0056‐FP‐042, in part by the National Institute of Standards and Technology (NIST), in part by SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by NIST, in part by the Minnesota Nano Center by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award ECCS‐2025124, and in part by the Characterization Facility of University of Minnesota by NSF through the UMN MRSEC under Grant No. DMR‐2011401. D.L. and J.‐P.W. thank the support from the Office of the Vice President for Research (OVPR) of the University of Minnesota to the purchase of the ultrahigh‐vacuum multi‐chamber sputtering system (Oerlikon Leybold Vacuum UNIVEX MULTICHAMBER). D.H. and X.W. appreciate the partial support from NSF under Grant No. CBET‐2226579. The authors thank the team of Covalent Metrology for performing TEM‐related characterizations.

Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.

Keywords

industry compatibility
L1 -FePd
perpendicular magnetic anisotropy
spintronics
synthetic antiferromagnets

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@article{d9fad4e1a40c495b9797f1c18be90d3c,

title = "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics",

abstract = "As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, high-quality L10-FePd and its SAF on Si/SiO2 wafers are prepared by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.",

keywords = "industry compatibility, L1 -FePd, perpendicular magnetic anisotropy, spintronics, synthetic antiferromagnets",

author = "Deyuan Lyu and Shoup, {Jenae E.} and Dingbin Huang and Javier Garc{\'i}a-Barriocanal and Qi Jia and William Echtenkamp and Rojas, {Geoffrey A.} and Guichuan Yu and Zink, {Brandon R} and Xiaojia Wang and Gopman, {Daniel B.} and Jianping Wang",

note = "Funding Information: This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) (Advanced MTJs for computation in and near random access memory) under Grant HR001117S0056‐FP‐042, in part by the National Institute of Standards and Technology (NIST), in part by SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by NIST, in part by the Minnesota Nano Center by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award ECCS‐2025124, and in part by the Characterization Facility of University of Minnesota by NSF through the UMN MRSEC under Grant No. DMR‐2011401. D.L. and J.‐P.W. thank the support from the Office of the Vice President for Research (OVPR) of the University of Minnesota to the purchase of the ultrahigh‐vacuum multi‐chamber sputtering system (Oerlikon Leybold Vacuum UNIVEX MULTICHAMBER). D.H. and X.W. appreciate the partial support from NSF under Grant No. CBET‐2226579. The authors thank the team of Covalent Metrology for performing TEM‐related characterizations. Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.",

year = "2023",

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language = "English (US)",

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T1 - Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics

AU - Lyu, Deyuan

AU - Shoup, Jenae E.

AU - Huang, Dingbin

AU - García-Barriocanal, Javier

AU - Jia, Qi

AU - Echtenkamp, William

AU - Rojas, Geoffrey A.

AU - Yu, Guichuan

AU - Zink, Brandon R

AU - Wang, Xiaojia

AU - Gopman, Daniel B.

AU - Wang, Jianping

N1 - Funding Information: This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) (Advanced MTJs for computation in and near random access memory) under Grant HR001117S0056‐FP‐042, in part by the National Institute of Standards and Technology (NIST), in part by SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by NIST, in part by the Minnesota Nano Center by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award ECCS‐2025124, and in part by the Characterization Facility of University of Minnesota by NSF through the UMN MRSEC under Grant No. DMR‐2011401. D.L. and J.‐P.W. thank the support from the Office of the Vice President for Research (OVPR) of the University of Minnesota to the purchase of the ultrahigh‐vacuum multi‐chamber sputtering system (Oerlikon Leybold Vacuum UNIVEX MULTICHAMBER). D.H. and X.W. appreciate the partial support from NSF under Grant No. CBET‐2226579. The authors thank the team of Covalent Metrology for performing TEM‐related characterizations. Publisher Copyright: © 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.

PY - 2023/5/2

Y1 - 2023/5/2

N2 - As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, high-quality L10-FePd and its SAF on Si/SiO2 wafers are prepared by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

AB - As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, high-quality L10-FePd and its SAF on Si/SiO2 wafers are prepared by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

KW - industry compatibility

KW - L1 -FePd

KW - perpendicular magnetic anisotropy

KW - spintronics

KW - synthetic antiferromagnets

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DO - 10.1002/adfm.202214201

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Sputtered L1₀-FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics

Abstract

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Keywords

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