Keyphrases
Ambient Temperature
100%
Spin Transfer Torque Switching
100%
Switching Current Density
100%
Temperature Effect
66%
Spin-transfer Torque Magnetic RAM (STT-MRAM)
66%
Temperature Range
66%
Switching Time
66%
Work Environment
33%
Magnetic Tunnel Junction
33%
Memory Design
33%
Increased Temperature
33%
Coercivity
33%
Switching Mechanism
33%
Thermal Stability
33%
Tunneling Magnetoresistance
33%
Most Probable
33%
Thermally Activated Processes
33%
Switching Current Distribution
33%
Density Variation
33%
Short Pulse
33%
Long Pulse
33%
Environmental Temperature
33%
Thermal Switching
33%
Precessional Switching
33%
Engineering
Spin Transfer
100%
Switching Time
66%
Temperature Range
66%
Temperature Dependence
66%
Random Access Memory
66%
Magnetic Tunnel Junction
33%
Increasing Temperature
33%
Environmental Temperature
33%
Precessional Switching
33%
Coercivity
33%
Current Distribution
33%
Tunnel Construction
33%
Ambient Temperature
33%
Physics
Temperature Dependence
100%
Tunnel Junction
50%
Tunneling Magnetoresistance
50%
Current Distribution
50%
Coercivity
50%
Ambient Temperature
50%
Material Science
Density
100%
Thermal Stability
33%
Tunneling Magnetoresistance
33%