Spin Transfer Torque Random Access Memory

Jianping Wang, Mahdi Jamali, Angeline Klemm, Hao Meng

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

As semiconductor-based technologies such as SRAM and flash are predicted to reach their limitations in scaling, there has been a significant effort in developing the next generation of nonvolatile memory. One promising candidate to realize low-power operation and a high areal density nonvolatile memory is spin transfer torque random access memory (STT-RAM), which relies on the direction of magnetization for information storage and the transfer of angular momentum of spin polarized current for writing. In this chapter, the operation of STT-RAM is discussed. Experimental demonstrations that have allowed for the advancement of this technology are presented, including the development of perpendicular STT-RAM cells, methods to reduce the critical current density required for writing, and a design to achieve sub-200ps writing of STT-RAM cells. The current state-of-the-art demonstrations are presented along with perspectives on STT-RAM.

Original languageEnglish (US)
Title of host publicationEmerging Nanoelectronic Devices
PublisherWiley-Blackwell
Pages56-77
Number of pages22
Volume9781118447741
ISBN (Electronic)9781118958254
ISBN (Print)9781118447741
DOIs
StatePublished - Jan 27 2015

Keywords

  • Dual pinned structure
  • Electric field assisted switching
  • Perpendicular MTJ
  • Perpendicular magnetic anisotropy
  • STT-RAM
  • Spin transfer torque
  • Spin-orbit torques
  • Ultrafast MTJ

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