Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Zongzhi Zhang; Yisong Zhang; Yaowen Liu; B. Ma; Q. Y. Jin

doi:10.1063/1.2713143

Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Zongzhi Zhang, Yisong Zhang, Yaowen Liu, B. Ma, Q. Y. Jin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

Original language	English (US)
Article number	112504
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713143
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 10604016, 60678008, 10404019 and 60490290) and by the Science and Technology Committee of Shanghai (Nos. 05PJ14016, 05PJ14090 and 06DJ14007). The simulation work was supported by Fudan National High Performance Computing Center.

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title = "Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels",

abstract = "Spin-transfer-induced magnetization switching processes are evidenced by the {"}snapshots{"} of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.",

author = "Zongzhi Zhang and Yisong Zhang and Yaowen Liu and B. Ma and Jin, {Q. Y.}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10604016, 60678008, 10404019 and 60490290) and by the Science and Technology Committee of Shanghai (Nos. 05PJ14016, 05PJ14090 and 06DJ14007). The simulation work was supported by Fudan National High Performance Computing Center.",

year = "2007",

doi = "10.1063/1.2713143",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

AU - Zhang, Zongzhi

AU - Zhang, Yisong

AU - Liu, Yaowen

AU - Ma, B.

AU - Jin, Q. Y.

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10604016, 60678008, 10404019 and 60490290) and by the Science and Technology Committee of Shanghai (Nos. 05PJ14016, 05PJ14090 and 06DJ14007). The simulation work was supported by Fudan National High Performance Computing Center.

PY - 2007

Y1 - 2007

N2 - Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

AB - Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

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DO - 10.1063/1.2713143

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Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Abstract

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