Spin-transfer-induced magnetization switching in magnetic tunnel junctions

Yisong Zhang, Zongzhi Zhang, Yaowen Liu, Bin Ma, Q. Y. Jin

Research output: Contribution to journalArticle

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Abstract

Micromagnetic simulations for spin-transfer-induced magnetization dynamics in nanoscale low-resistance magnetic tunnel junctions (MTJs) are performed by using the modified Landau-Lifshitz equation in which a spin-transfer model for MTJs is included. Calculations show that critical switching current density (Jc) is about (4-8) × 106 A cm2, consistent with the experimental data, lower than the values found in metallic spin-valve nanopillars (typically in the order of ∼ 107 A cm2). A slight asymmetry of the critical current is observed in the magnetization switching loop, due to the asymmetry of the spin-torque factor. The switching time is related to the applied current, and our calculation results show that a longer switching time, 10-15 ns, is needed when the applied current density J is close to Jc, and it decreases down to 1 ns for J>2× 107 A cm2.

Original languageEnglish (US)
Article number08G515
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
StatePublished - May 25 2006

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