Spin-transfer-induced magnetization switching in magnetic tunnel junctions

Yisong Zhang, Zongzhi Zhang, Yaowen Liu, Bin Ma, Q. Y. Jin

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Micromagnetic simulations for spin-transfer-induced magnetization dynamics in nanoscale low-resistance magnetic tunnel junctions (MTJs) are performed by using the modified Landau-Lifshitz equation in which a spin-transfer model for MTJs is included. Calculations show that critical switching current density (Jc) is about (4-8) × 106 A cm2, consistent with the experimental data, lower than the values found in metallic spin-valve nanopillars (typically in the order of ∼ 107 A cm2). A slight asymmetry of the critical current is observed in the magnetization switching loop, due to the asymmetry of the spin-torque factor. The switching time is related to the applied current, and our calculation results show that a longer switching time, 10-15 ns, is needed when the applied current density J is close to Jc, and it decreases down to 1 ns for J>2× 107 A cm2.

Original languageEnglish (US)
Article number08G515
JournalJournal of Applied Physics
Issue number8
StatePublished - 2006

Bibliographical note

Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 10404019, 60490290, and 10374019), grants from the Science and Technology Committee of Shanghai (Grant Nos. 04D214001, 05PJ14016, and 05PJ14090).


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