Spin transfer in nanomagnetic devices with perpendicular anisotropy

Hao Meng; Jian Ping Wang

doi:10.1063/1.2198797

Spin transfer in nanomagnetic devices with perpendicular anisotropy

Hao Meng, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

235 Scopus citations

Abstract

Spin momentum transfer in a nanomagnetic device with perpendicular magnetic anisotropy for both free and fixed magnetic layers is studied. The perpendicular anisotropy is induced by using CoFePt multilayer. The magnetoresistive loop shows that the perpendicular switching fields for the free and fixed layers are 170 and 380 Oe, respectively, with ΔRR=0.47%. Resistance-current scanning clearly shows a full out-of-plane switching of the free layer magnetization under a sweeping current, which fully excludes the effect of switching by the magnetic field generated by the current. The critical current density is around 1.0× 108 A cm2, which could be tuned by changing the CoFePt multilayer structures.

Original language	English (US)
Article number	172506
Journal	Applied Physics Letters
Volume	88
Issue number	17
DOIs	https://doi.org/10.1063/1.2198797
State	Published - 2006

Bibliographical note

Funding Information:
This work was supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302 and Heraeus Inc. The authors thank the discussion with Professor Jack H Judy at University of Minnesota.

Access

10.1063/1.2198797

Fingerprint Dive into the research topics of 'Spin transfer in nanomagnetic devices with perpendicular anisotropy'. Together they form a unique fingerprint.

Cite this

@article{205e298da3f449f79ee37c12440d5776,

title = "Spin transfer in nanomagnetic devices with perpendicular anisotropy",

abstract = "Spin momentum transfer in a nanomagnetic device with perpendicular magnetic anisotropy for both free and fixed magnetic layers is studied. The perpendicular anisotropy is induced by using CoFePt multilayer. The magnetoresistive loop shows that the perpendicular switching fields for the free and fixed layers are 170 and 380 Oe, respectively, with ΔRR=0.47%. Resistance-current scanning clearly shows a full out-of-plane switching of the free layer magnetization under a sweeping current, which fully excludes the effect of switching by the magnetic field generated by the current. The critical current density is around 1.0× 108 A cm2, which could be tuned by changing the CoFePt multilayer structures.",

author = "Hao Meng and Wang, {Jian Ping}",

note = "Funding Information: This work was supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302 and Heraeus Inc. The authors thank the discussion with Professor Jack H Judy at University of Minnesota. ",

year = "2006",

doi = "10.1063/1.2198797",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Spin transfer in nanomagnetic devices with perpendicular anisotropy

AU - Meng, Hao

AU - Wang, Jian Ping

N1 - Funding Information: This work was supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302 and Heraeus Inc. The authors thank the discussion with Professor Jack H Judy at University of Minnesota.

PY - 2006

Y1 - 2006

N2 - Spin momentum transfer in a nanomagnetic device with perpendicular magnetic anisotropy for both free and fixed magnetic layers is studied. The perpendicular anisotropy is induced by using CoFePt multilayer. The magnetoresistive loop shows that the perpendicular switching fields for the free and fixed layers are 170 and 380 Oe, respectively, with ΔRR=0.47%. Resistance-current scanning clearly shows a full out-of-plane switching of the free layer magnetization under a sweeping current, which fully excludes the effect of switching by the magnetic field generated by the current. The critical current density is around 1.0× 108 A cm2, which could be tuned by changing the CoFePt multilayer structures.

AB - Spin momentum transfer in a nanomagnetic device with perpendicular magnetic anisotropy for both free and fixed magnetic layers is studied. The perpendicular anisotropy is induced by using CoFePt multilayer. The magnetoresistive loop shows that the perpendicular switching fields for the free and fixed layers are 170 and 380 Oe, respectively, with ΔRR=0.47%. Resistance-current scanning clearly shows a full out-of-plane switching of the free layer magnetization under a sweeping current, which fully excludes the effect of switching by the magnetic field generated by the current. The critical current density is around 1.0× 108 A cm2, which could be tuned by changing the CoFePt multilayer structures.

UR - http://www.scopus.com/inward/record.url?scp=33646399791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646399791&partnerID=8YFLogxK

U2 - 10.1063/1.2198797

DO - 10.1063/1.2198797

M3 - Article

AN - SCOPUS:33646399791

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 172506

ER -