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Spin-polarized transient electron trapping in phosphorus-doped silicon
Yuan Lu, Jing Li, Ian Appelbaum
Research output
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Contribution to journal
›
Article
›
peer-review
17
Scopus citations
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Keyphrases
Excited States
100%
Spin-polarized
100%
Injector
100%
Spin Transport
100%
Si-doped
100%
Numerical Model
100%
Electron Spin
100%
Electron Density
100%
Impurities
100%
Spin Interaction
100%
Density Dependence
100%
Conduction Band
100%
Short Time Scale
100%
Electron Traps
100%
Si Channel
100%
Phosphorus Doping
100%
Phosphorus-doped Silicon
100%
Band-like Transport
100%
Re-emission
100%
Spin Precession
100%
Electrical Devices
100%
Shallow Impurity
100%
Information Application
100%
Quantum Information
100%
Phosphorus Impurity
100%
All-electrical
100%
Quantum Regime
100%
Physics
Quantum Information
100%
Electron Density
100%
Density Dependence
100%
Numerical Model
100%
Excitation
100%
Conduction Band
100%
Transients
100%
Electron Spin
100%
Material Science
Silicon
100%
Carrier Concentration
100%