Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors

M. Yunus; P. P. Ruden; D. L. Smith

doi:10.1063/1.3522657

Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors

M. Yunus, P. P. Ruden, D. L. Smith

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Tunnel-injection of spin-polarized charge carriers from ferromagnetic contacts into organic semiconductors is modeled. Tunneling matrix elements and transition rates for the two spin types are calculated using a transfer Hamiltonian. The tunneling process occurs between extended states of the contact and model "molecular" orbitals. We explore the effects of the tunnel barrier height and of the ferromagnetic contact's Fermi wave vectors on the level of spin injection. The barrier height and the majority and minority spin Fermi wave vectors of the contact have strong effects on the sign and magnitude of spin injection.

Original language	English (US)
Article number	223304
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3522657
State	Published - Nov 29 2010

Bibliographical note

Funding Information:
This work was supported in part by NSF (Grant No. ECCS-0724886). Access to the facilities of the Minnesota Supercomputing Institute for Digital Simulation and Advanced Computation is gratefully acknowledged. Work at Los Alamos National Laboratory was supported by DoE Office of Basic Energy Sciences Work Proposal No. 08SPCE973.

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abstract = "Tunnel-injection of spin-polarized charge carriers from ferromagnetic contacts into organic semiconductors is modeled. Tunneling matrix elements and transition rates for the two spin types are calculated using a transfer Hamiltonian. The tunneling process occurs between extended states of the contact and model {"}molecular{"} orbitals. We explore the effects of the tunnel barrier height and of the ferromagnetic contact's Fermi wave vectors on the level of spin injection. The barrier height and the majority and minority spin Fermi wave vectors of the contact have strong effects on the sign and magnitude of spin injection.",

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AU - Ruden, P. P.

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PY - 2010/11/29

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N2 - Tunnel-injection of spin-polarized charge carriers from ferromagnetic contacts into organic semiconductors is modeled. Tunneling matrix elements and transition rates for the two spin types are calculated using a transfer Hamiltonian. The tunneling process occurs between extended states of the contact and model "molecular" orbitals. We explore the effects of the tunnel barrier height and of the ferromagnetic contact's Fermi wave vectors on the level of spin injection. The barrier height and the majority and minority spin Fermi wave vectors of the contact have strong effects on the sign and magnitude of spin injection.

AB - Tunnel-injection of spin-polarized charge carriers from ferromagnetic contacts into organic semiconductors is modeled. Tunneling matrix elements and transition rates for the two spin types are calculated using a transfer Hamiltonian. The tunneling process occurs between extended states of the contact and model "molecular" orbitals. We explore the effects of the tunnel barrier height and of the ferromagnetic contact's Fermi wave vectors on the level of spin injection. The barrier height and the majority and minority spin Fermi wave vectors of the contact have strong effects on the sign and magnitude of spin injection.

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Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors

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