Spin-orbit-torque material exploration for maximum array-level read/write performance

Yu Ching Liao, Piyush Kumar, Mahendra Dc, Xiang Li, Delin Zhang, Jian Ping Wang, Shan X. Wang, Daniel C. Ralph, A. Naeemi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.

Original languageEnglish (US)
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages13.6.1-13.6.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - Dec 12 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: Dec 12 2020Dec 18 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period12/12/2012/18/20

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The authors gratefully thank Drs. Jonathan Sun, Carlos H. Diaz, Shy-Jay Lin, and Nuo Xu for insightful discussions. This research is supported by ASCENT in the JUMP program through Semiconductor Research Corporation.

Publisher Copyright:
© 2020 IEEE.

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