A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.
|Original language||English (US)|
|Title of host publication||2020 IEEE International Electron Devices Meeting, IEDM 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Dec 12 2020|
|Event||66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States|
Duration: Dec 12 2020 → Dec 18 2020
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||66th Annual IEEE International Electron Devices Meeting, IEDM 2020|
|City||Virtual, San Francisco|
|Period||12/12/20 → 12/18/20|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT The authors gratefully thank Drs. Jonathan Sun, Carlos H. Diaz, Shy-Jay Lin, and Nuo Xu for insightful discussions. This research is supported by ASCENT in the JUMP program through Semiconductor Research Corporation.
© 2020 IEEE.