Spin-orbit-torque material exploration for maximum array-level read/write performance

Yu Ching Liao; Piyush Kumar; Mahendra Dc; Xiang Li; Delin Zhang; Jian Ping Wang; Shan X. Wang; Daniel C. Ralph; A. Naeemi

doi:10.1109/IEDM13553.2020.9371979

Spin-orbit-torque material exploration for maximum array-level read/write performance

Yu Ching Liao, Piyush Kumar, Mahendra Dc, Xiang Li, Delin Zhang, Jian Ping Wang, Shan X. Wang, Daniel C. Ralph, A. Naeemi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.

Original language	English (US)
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	13.6.1-13.6.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371979
State	Published - Dec 12 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: Dec 12 2020 → Dec 18 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 12/18/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Publisher link

10.1109/IEDM13553.2020.9371979

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Liao, Y. C., Kumar, P., Dc, M., Li, X., Zhang, D., Wang, J. P., Wang, S. X., Ralph, D. C., & Naeemi, A. (2020). Spin-orbit-torque material exploration for maximum array-level read/write performance. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 13.6.1-13.6.4). Article 9371979 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371979

Spin-orbit-torque material exploration for maximum array-level read/write performance. / Liao, Yu Ching; Kumar, Piyush; Dc, Mahendra et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 13.6.1-13.6.4 9371979 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, YC, Kumar, P, Dc, M, Li, X, Zhang, D, Wang, JP, Wang, SX, Ralph, DC & Naeemi, A 2020, Spin-orbit-torque material exploration for maximum array-level read/write performance. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371979, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 13.6.1-13.6.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371979

Liao YC, Kumar P, Dc M, Li X, Zhang D, Wang JP et al. Spin-orbit-torque material exploration for maximum array-level read/write performance. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 13.6.1-13.6.4. 9371979. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371979

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abstract = "A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.",

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AB - A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.

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Spin-orbit-torque material exploration for maximum array-level read/write performance

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