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Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

  • X. Y. Dong
  • , C. Adelmann
  • , J. Q. Xie
  • , C. J. Palmstrøm
  • , X. Lou
  • , J. Strand
  • , P. A. Crowell
  • , J. P. Barnes
  • , A. K. Petford-Long

Research output: Contribution to journalArticlepeer-review

Abstract

Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.

Original languageEnglish (US)
Article number102107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005

Bibliographical note

Funding Information:
This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).

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