Abstract
Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.
| Original language | English (US) |
|---|---|
| Article number | 102107 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 10 |
| DOIs | |
| State | Published - Mar 7 2005 |
Bibliographical note
Funding Information:This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).
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