Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

X. Y. Dong; C. Adelmann; J. Q. Xie; C. J. Palmstrøm; X. Lou; J. Strand; P. A. Crowell; J. P. Barnes; A. K. Petford-Long

doi:10.1063/1.1881789

Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

X. Y. Dong, C. Adelmann, J. Q. Xie, C. J. Palmstrøm, X. Lou, J. Strand, P. A. Crowell, J. P. Barnes, A. K. Petford-Long

Physics and Astronomy (Twin Cities)

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156 Scopus citations

Abstract

Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.

Original language	English (US)
Article number	102107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	10
DOIs	https://doi.org/10.1063/1.1881789
State	Published - Mar 7 2005

Bibliographical note

Funding Information:
This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).

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10.1063/1.1881789

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title = "Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures",

abstract = "Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.",

author = "Dong, {X. Y.} and C. Adelmann and Xie, {J. Q.} and Palmstr{\o}m, {C. J.} and X. Lou and J. Strand and Crowell, {P. A.} and Barnes, {J. P.} and Petford-Long, {A. K.}",

note = "Funding Information: This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).",

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doi = "10.1063/1.1881789",

language = "English (US)",

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T1 - Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

AU - Dong, X. Y.

AU - Adelmann, C.

AU - Xie, J. Q.

AU - Palmstrøm, C. J.

AU - Lou, X.

AU - Strand, J.

AU - Crowell, P. A.

AU - Barnes, J. P.

AU - Petford-Long, A. K.

N1 - Funding Information: This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).

PY - 2005/3/7

Y1 - 2005/3/7

N2 - Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.

AB - Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.

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Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

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