Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.
Bibliographical noteFunding Information:
This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).