Spin injection from the Heusler alloy Co2 MnGe into Al0.1 Ga0.9 AsGaAs heterostructures

X. Y. Dong, C. Adelmann, J. Q. Xie, C. J. Palmstrøm, X. Lou, J. Strand, P. A. Crowell, J. P. Barnes, A. K. Petford-Long

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Abstract

Electrical spin injection from the Heusler alloy Co2 MnGe into a p-i-n Al0.1 Ga0.9 AsGaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2 MnGe decays more rapidly with increasing temperature.

Original languageEnglish (US)
Article number102107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005

Bibliographical note

Funding Information:
This work was supported in part by the DARPA SPINS program, ONR, and the University of Minnesota MRSEC (NSF DMR-0212032).

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