Spin-based quantum dot quantum computing in silicon

Mark A. Eriksson, Mark Friesen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker, Charles Tahan, P. M. Mooney, J. O. Chu, S. J. Koester

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We discuss the pros and cons of using silicon, present recent advances, and outline challenges.

Original languageEnglish (US)
Pages (from-to)133-146
Number of pages14
JournalQuantum Information Processing
Issue number1-5
StatePublished - Oct 2004

Bibliographical note

Funding Information:
We thank Steve Lyon, Alex Rimberg, and the University of Wisconsin solid state quantum computing group for many fruitful discussions. We acknowledge support from ARDA, ARO, and NSF.


  • Quantum computation
  • Quantum dot
  • Quantum well
  • Silicon
  • Silicon-germanium
  • Spin


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