Spin analog-to-digital convertor using magnetic tunnel junction and spin hall effect

Yanfeng Jiang, Yang Lv, Mahdi Jamali, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

A spin-based analog-to-digital converter (ADC) using magnetic tunnel junctions (MTJs) is proposed in this letter. Our proposal is based on a novel high-speed low-power MTJ comparator that is controlled through spin Hall effect and voltage-controlled magnetic anisotropy effects. According to the simulation results, spin ADC offers features including high sampling rate, low-power consumption, and less chip area occupation for higher bit resolution while provides the benefit of nonvolatility of conversion results.

Original languageEnglish (US)
Article number7070706
Pages (from-to)511-513
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number5
DOIs
StatePublished - May 1 2015

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • Analog-to-digital converter (ADC)
  • magnetic tunnel junction
  • spin hall effect
  • voltage controlled magnetic anisotropy

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