Spice up your MOSFET modelling

Yu Cao; Michael Orshansky; Takashi Sato; Dennis Sylvester; Chenming Hu

doi:10.1109/MCD.2003.1217613

Spice up your MOSFET modelling

Yu Cao
, Michael Orshansky
, Takashi Sato
, Dennis Sylvester
, Chenming Hu

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A customizable and predictive BSIM model was generated for devices with L_eff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.

Original language	English (US)
Pages (from-to)	17-23
Number of pages	7
Journal	IEEE Circuits and Devices Magazine
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/MCD.2003.1217613
State	Published - Jul 2003
Externally published	Yes

Bibliographical note

Funding Information:
The authors thank Dr. J. Park- hurst, Dr. K. Soumyanath, and Dr. V.K. De for valuable sugges tions to this project. This re search is sponsored by the Semiconductor Research Com mittee (SRC) under SRC 99-NJ-697.

Publisher link

10.1109/MCD.2003.1217613

Find It

Find It at U of M Libraries

Cite this

@article{3f32ffedcfc04d83b4fb683390b4a877,

title = "Spice up your MOSFET modelling",

abstract = "A customizable and predictive BSIM model was generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.",

author = "Yu Cao and Michael Orshansky and Takashi Sato and Dennis Sylvester and Chenming Hu",

note = "Funding Information: The authors thank Dr. J. Park- hurst, Dr. K. Soumyanath, and Dr. V.K. De for valuable sugges tions to this project. This re search is sponsored by the Semiconductor Research Com mittee (SRC) under SRC 99-NJ-697.",

year = "2003",

month = jul,

doi = "10.1109/MCD.2003.1217613",

language = "English (US)",

volume = "19",

pages = "17--23",

journal = "IEEE Circuits and Devices Magazine",

issn = "8755-3996",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Spice up your MOSFET modelling

AU - Cao, Yu

AU - Orshansky, Michael

AU - Sato, Takashi

AU - Sylvester, Dennis

AU - Hu, Chenming

N1 - Funding Information: The authors thank Dr. J. Park- hurst, Dr. K. Soumyanath, and Dr. V.K. De for valuable sugges tions to this project. This re search is sponsored by the Semiconductor Research Com mittee (SRC) under SRC 99-NJ-697.

PY - 2003/7

Y1 - 2003/7

N2 - A customizable and predictive BSIM model was generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.

AB - A customizable and predictive BSIM model was generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.

UR - https://www.scopus.com/pages/publications/0042921255

UR - https://www.scopus.com/pages/publications/0042921255#tab=citedBy

U2 - 10.1109/MCD.2003.1217613

DO - 10.1109/MCD.2003.1217613

M3 - Article

AN - SCOPUS:0042921255

SN - 8755-3996

VL - 19

SP - 17

EP - 23

JO - IEEE Circuits and Devices Magazine

JF - IEEE Circuits and Devices Magazine

IS - 4

ER -

Spice up your MOSFET modelling

Abstract

Bibliographical note

Publisher link

Find It

Other files and links

Fingerprint

Cite this