SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions

Jonathan D. Harms, Farbod Ebrahimi, Xiaofeng Yao, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

75 Scopus citations


The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.

Original languageEnglish (US)
Article number5464332
Pages (from-to)1425-1430
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - Jun 1 2010


  • Macromodel
  • Magnetic random-access memory (MRAM)
  • Magnetic tunnel junction (MTJ)
  • Spin-torque-transfer (STT)

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