Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Tiantian Li, Dun Mao, Nick W. Petrone, Robert Grassi, Hao Hu, Yunhong Ding, Zhihong Huang, Guo Qiang Lo, James C. Hone, Tony Low, Chee Wei Wong, Tingyi Gu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.

Original languageEnglish (US)
Article number36
Journalnpj 2D Materials and Applications
Volume2
Issue number1
DOIs
StatePublished - Dec 1 2018

Fingerprint

p-i-n junctions
Graphite
Silicon
Photodiodes
Graphene
photodiodes
Electrostatics
graphene
Doping (additives)
electrostatics
silicon
photonics
Photonic devices
foundries
Hot carriers
Foundries
Bias voltage
optoelectronic devices
Photonic crystals
Quantum efficiency

Cite this

Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode. / Li, Tiantian; Mao, Dun; Petrone, Nick W.; Grassi, Robert; Hu, Hao; Ding, Yunhong; Huang, Zhihong; Lo, Guo Qiang; Hone, James C.; Low, Tony; Wong, Chee Wei; Gu, Tingyi.

In: npj 2D Materials and Applications, Vol. 2, No. 1, 36, 01.12.2018.

Research output: Contribution to journalArticle

Li, Tiantian ; Mao, Dun ; Petrone, Nick W. ; Grassi, Robert ; Hu, Hao ; Ding, Yunhong ; Huang, Zhihong ; Lo, Guo Qiang ; Hone, James C. ; Low, Tony ; Wong, Chee Wei ; Gu, Tingyi. / Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode. In: npj 2D Materials and Applications. 2018 ; Vol. 2, No. 1.
@article{b34036f6f7524480bf65ed1d743c3a1c,
title = "Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode",
abstract = "Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.",
author = "Tiantian Li and Dun Mao and Petrone, {Nick W.} and Robert Grassi and Hao Hu and Yunhong Ding and Zhihong Huang and Lo, {Guo Qiang} and Hone, {James C.} and Tony Low and Wong, {Chee Wei} and Tingyi Gu",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41699-018-0080-4",
language = "English (US)",
volume = "2",
journal = "npj 2D Materials and Applications",
issn = "2397-7132",
number = "1",

}

TY - JOUR

T1 - Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

AU - Li, Tiantian

AU - Mao, Dun

AU - Petrone, Nick W.

AU - Grassi, Robert

AU - Hu, Hao

AU - Ding, Yunhong

AU - Huang, Zhihong

AU - Lo, Guo Qiang

AU - Hone, James C.

AU - Low, Tony

AU - Wong, Chee Wei

AU - Gu, Tingyi

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.

AB - Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.

UR - http://www.scopus.com/inward/record.url?scp=85070850953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070850953&partnerID=8YFLogxK

U2 - 10.1038/s41699-018-0080-4

DO - 10.1038/s41699-018-0080-4

M3 - Article

AN - SCOPUS:85070850953

VL - 2

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

SN - 2397-7132

IS - 1

M1 - 36

ER -