Abstract
Heterogeneous materials with spatially modulated bandgaps have many unique applications, such as super-broadband nanolasers, color engineered displays, hyperspectral detectors, and full spectrum solar cells. In this work, spatially composition-graded WSe2 - 2xTe2x flakes are synthesized through an in situ chemical vapor deposition method. Furthermore, a monolayer flake topography is confirmed by atomic force microscopy. Photoluminescence and Raman line-scanning characterization indicate the bandgap changes continuously from center (1.46 eV) to edge (∼1.61 eV) within a monolayer flake. Electronic devices based on this spatially composition-graded material exhibit tunable transfer curves. First principal calculation reveals that the electron affinity increases, while the bandgap decreases based on tellurium composition. This is consistent with experimentally observed non-monotonic dependence of the hole current on tellurium composition. This work provides the experimental groundwork for synthesis of the composition-graded transition metal dichalcogenide materials and offers a route toward tailoring their electrical properties by bandgap engineering in the future.
| Original language | English (US) |
|---|---|
| Article number | 231903 |
| Journal | Applied Physics Letters |
| Volume | 120 |
| Issue number | 23 |
| DOIs | |
| State | Published - Jun 6 2022 |
| Externally published | Yes |
Bibliographical note
Funding Information:The authors would like to thank the support from the Office of Naval Research (ONR) under Grant No. NAVY N00014-17-1-2973, the Semiconductor Research Corporation (SRC) under Grant No. SRC 2021-LM-3042, and the National Science Foundation (NSF) under Grant No. ECCS 16-53241 CAR. The authors also thank the Materials Research Laboratory of University of Illinois for the STEM measurement.
Publisher Copyright:
© 2022 Author(s).
